The properties of crystalline carbon nitride films ( cn ) on silicon substrate have been explored experimentally by the pe - pld and pe - cvd method . the relation between different deposition parameter and the structure properties of cn compound films is analyzed ; the deposition mechanism of the cn films is studied . cn thin films with up to 21at % nitrogen content have been prepared by pld method 本论文采用pe - pld技术和pe - cvd技术，以si基片为衬底对晶态cn薄膜制备进行了实验探索，主要探讨不同工艺条件和cn化合物薄膜的结构特性之间的关系，研究晶态si基cn薄膜的生长机理。
